Ishu Verma

Campus Ambassador at Viden.io

Campus Ambassador at Viden.io

Studied at State Institute of Engineering & Technology

OPTICAL FIBRE COMMUNICATION

EBOOK FOR OPTICAL COMMUNICATION

Digital Image Processing 3rd ed. - R. Gonzalez, R. Woods EBOOK

Digital image processing ebook which covers all the topics about the subject ?

LPC2148 USER MANUAL

USER MANUAL CONTAINS ALL DETAILS ABOUT CONTROLLER LIKE ARCHITECTURE,REGISTERS ETC.

atmega8 user manual

USER MANUAL CONTAINS ALL DESRIPTIONS ABOUT THE CONTROLLERS & SOME PROJECTS.

MICROELECTRONIC DEVICES AND CIRCUITS 2006 Electronic Edition Clifton G. Fonstad

CONTENTS Preface 1 Modeling 1.1 General Comments 1.2 Empirical Device Models 1.3 Why Semiconductors? Why Transistors? 2.1 Thermal Equilibrium 2.2 Intrinsic Silicon 2.3 Extrinsic Silicon 2 Uniform Semiconductors in Equilibrium 2.3.1 Donors and Acceptors 2.3.2 Detailed Balance 2.3.3 Equilibrium Carrier Concentration 2.4.1 Elemental Semiconductors 2.4.2 Compound Semiconductors 2.4 Additional Semiconductors 2.5 2.6 Summary 3.1 Uniform Electric Field: Drift The Effects of Changing Temperature 3 Uniform Excitation of Semiconductors 3.1.1 Drift Motion and Mobility 3.1.2 Drift Current and Conductivity 3,1.3 3.2 Uniform Optical Excitation 3.2.1 Minority Carrier Lifetime 3.2.2 Population Transients 3.2.3 3.3.1 Basic Concepts 3.3.2 Specific Device Issues Temperature Variation of Mobility and Conductivity High-Level Injection Populations and Transients 3.3 Photoconductivity and Photoconductors 4 Nonuniform Situations: The Five Basic Equations 4.1 Diffusion 4.1.1 A Model for Diffusion 4.1.2 Diffusion Current Density 4.1.3 4.2 Modeling Nonuniform Situations 4.2.1 Total Current Densities 4.2.2 The Continuity Equations 4.2.3 Gauss’s Law 4.2.4 The Five Basic Equations Other Diffusion Important in Devices 4.3 Summary 5 Nonuniform Carrier Injection: Flow Problems 5.1 Developing the Diffusion Equation 5.1.1 Uniformly Doped Extrinsic Material 5.1.2 Low-Level Injection 5.1.3 Quasineutrality 5.1.4 Minority Carriers Flow by Diffusion 5.1.5 Time-Dependent Diffusion Equation 5.1.6 Quasistatic Diffusion: Flow Problems 5.2.1 Homogeneous Solutions 5.2.2 Particular Solutions 5.2.3 Boundary Conditions 5.2.4 The Total Current 5.2.5 Specific Situations 5.2.6 The Currents, Electric Field, and Net Charge 5.2 Flow Problems 5.3 summary in Thermal Equilibrium 6 Nonuniformly Doped Semiconductors 6.1 6.2 6.3 General Description: The Poisson-Boltzmann Equation Gradual Spatial Variation of Doping p-n Junction: The Depletion Approximation 6.3.1 Abrupt p-n Junction 6.3.2 Other p-n Junction Profiles 6.4 6.5 Summary 7.1 7.2 Depletion Region Changes 7.2.1 7.2.2 Depletion Capacitance 7.2.3 7.3.1 7.3.2 7.3.3 7.3.4 Diffusion Capacitance The Electrostatic Potential around a Circuit 7 Junction Diodes Applying Voltage to a p-n Junction Depletion Width Variation with Voltage Applications of the Depletion Capacitance Excess Populations at the Depletion Region Edges Current-Voltage Relationship for an Ideal Diode Limitations to the Simple Model 7.4 Circuit Models for Junction Diodes 7.4.1 Large-Signal Models 7.4.2 Static Small-Signal Linear Models 7.5 Solar Cells and Photodiodes 7.5.1 Optical Excitation of p-n Diodes 7.5.2 Applications of Illuminated p-n Diodes 7.6 Light-Emitting Diodes 7.7 Summary 8.1 8 Bipolar Junction Transistors The Ebers-Moll Model for Uniformly Doped One-Dimensional BJTs 8.1.1 Superposition 8.1.2 The Forward Portion (vgc = 0) 8.1.3 The Reverse Portion (vg~ = 0) 8.1.4 Full Solution: The Ebers-Moll Model 8.1.5 Characteristics and Operating Regions 8.1.6 Basic Transistor Design 8.1.7 8.2.1 Large-Signal Models 8.2.2 Static Small-Signal Linear Models 8.2.3 Dynamic Small-Signal Transistor Models Beyond Ebers-Moll: Limitations of the Model 8.2 Circuit Models for Bipolar Junction Transistors 8.3 Phototransistors 8.4 Summary 9.1 9.2 9 The MOS Capacitor The MOS Capacitor in Thermal Equilibrium Isolated MOS Capacitor with Applied Voltage 9.2.1 Flat-band 9.2.2 Accumulation 9.2.3 Depletion 9.2.4 Threshold and Inversion 9.3.1 9.3.2 Adjacent p-n Junction 9.3 Biased MOS Capacitor with Contact to the Channel Direct Contact to the Channel 9.4 9.5 Capacitance of MOS Capacitors versus Bias Ions and Interface Charges in MOS Structures 9.5.1 Interface Charge 9.5.2 Oxide Charge 9.6 Types of MOS Capacitors 9.6.1 n-channel, p-type Si 9.6.2 p-channel, n-type Si

OFC NOTES

ALL NOTES ABOUT OFC SUBJECT.

AVR PROJECTS

File contains all projects related with AVR microcontroller.

MICROCONTROLLER 8051 NOTES

MICROCONTROLLER 8051 NOTES CONTAINS ARCHITECTURE, PIN DIAGRAM & ALL DATA ABOUT THE 8051.

GATE ECE SYLLABUS

LATEST SYLLABUS GATE EXAM FOR ECE

DIGITAL ELECTRONICS NOTES

NOTES FOR DIGITAL ELECTRONICS SUBJECT

GRAPHS IN DATA STRUCTURE

GRAPHS NOTES IN DATA STRUCTURE